| PART |
Description |
Maker |
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFI630G IRFI630 IRFI630GPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=5.9A)
|
IRF[International Rectifier]
|
| IRFR9024N IRFU9024N IRFRU9024N IRFR9024NTR IRFR902 |
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=-55V Rds(on)=0.175ohm Id=-11A)
P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管) P通道表面贴装HEXFET功率MOSFET的性（P沟道表贴型的HEXFET功率马鞍山场效应管）
|
http://
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRC503 IRC530 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=100V/ Rds(on)=0.16ohm/ Id=14A)
Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)
Power MOSFET(Vdss=100V Rds(on)=0.16ohm Id=14A)
Hexfet? Power MOSFET
|
IRF[International Rectifier]
|
| IRFIB6N60A IRFIB6N60APBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=0.75ohm/ Id=5.5A)
|
IRF[International Rectifier]
|
| IRFI744G IRFI744GPBF |
450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=450V Rds(on)=0.63ohm Id=4.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=450V, Rds(on)=0.63ohm, Id=4.9A) 功率MOSFET（减振钢板基本\u003d 450V，的Rds（on）\u003d 0.63ohm，身份证\u003d 4.9A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF9540NSPBF IRF9540NLPBF IRF9540NSTRLPBF IRF9540N |
HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mヘ , ID = -23A )
HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mΩ , ID = -23A )
Advanced Process Technology
|
International Rectifier
|
| IRF1104PBF IRF1104PBF-15 |
HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009Ω , ID = 100A )
HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009ヘ , ID = 100A )
Advanced Process Technology
|
International Rectifier
|
| IRF6215LPBF IRF6215SPBF IRF6215RLPBF |
Advanced Process Technology
HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29ヘ , ID=-13A )
HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29Ω , ID=-13A )
|
Vishay Siliconix
International Rectifier
|
| IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五（巴西）直| 100号A（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFR9210 IRFU9210 |
-200V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
| IRFBG20 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET? Power MOSFET
Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A)
|
IRF[International Rectifier]
|
